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1999•IEEE International Magnetics ConferenceRequires access

Progress and outlook for MRAM technology

S. Tehrani, Jon M. Slaughter, E. Chen, Mark Durlam, J. Shi, Mark DeHerrera

Open publisher page 13 citations

Abstract

Each of the existing high volume semiconductor memory technologies has important advantages as well as some shortcomings. For example, SRAM has fast read and write speeds, hut it is volatile and requires large cell areas. DRAM has high density with moderate read/write speeds, however it is also volatile and quires periodic refresh of the storage capacitor. FLASH is a nonvolatile technology that has high density and can endure unlimited read but has serious.

About this research paper

What this paper is about

Each of the existing high volume semiconductor memory technologies has important advantages as well as some shortcomings. For example, SRAM has fast read and write speeds, hut it is volatile and requires large cell areas. DRAM has high density with moderate read/write speeds, however it is also volatile and quires periodic refresh of the storage capacitor. FLASH is a nonvolatile technology that has high density and can endure unlimited read but has serious.

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OpenAlex reports 13 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Each of the existing high volume semiconductor memory technologies has important advantages as well as some shortcomings. For example, SRAM has fast read and write speeds, hut it is volatile and requires large cell areas. DRAM has high density with moderate read/write speeds, however it is also volatile and quires periodic refresh of the storage capacitor. FLASH is a nonvolatile technology that has high density and can endure unlimited read but has serious.

Key concepts: Magnetoresistive random-access memory, Dram, Non-volatile random-access memory, Non-volatile memory, Universal memory, Computer science, Semiconductor memory, Static random-access memory

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