2022•PhotonicsOpen access

Theoretical Study of Quasi One-Well Terahertz Quantum Cascade Laser

Boyu Wen, Dayan Ban

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Abstract

Developing a high-temperature terahertz (THz) quantum cascade laser (QCL) has been one of the major challenges in the THz QCL field over recent decades. The maximum lasing temperature of THz QCLs has gradually been increased, arguably by shortening the length of repeating periods of the quantum structure in the device’s active region from 7 wells/14 layers to 2 wells/4 layers per period. The current highest operating temperature of 250 K was achieved in a two-well direct-phonon design. In this paper, we propose a potential and promising novel quantum design scheme named the quasi one-well (Q1W) design, in which each quantum cascade period consists of only three semiconductor layers. This design is the narrowest of all existing THz QCL structures to date. We explore a series of the Q1W designs using the non-equilibrium green function (NEGF) and rate-equation (RE) models. Both models show that the Q1W designs exhibit the potential to achieve sufficient optical gain with low-temperature sensitivity. Our simulation results suggest that this novel Q1W scheme may potentially lead to relatively less temperature-sensitive THz QCLs. The thickness of the Q1W scheme is less than 20 nm per period, which is the narrowest of the reported THz QCL schemes.

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Developing a high-temperature terahertz (THz) quantum cascade laser (QCL) has been one of the major challenges in the THz QCL field over recent decades. The maximum lasing temperature of THz QCLs has gradually been increased, arguably by shortening the length of repeating periods of the quantum structure in the device’s active region from 7 wells/14 layers to 2 wells/4 layers per period. The current highest operating temperature of 250 K was achieved in a two-well direct-phonon design. In this paper, we propose a potential and promising novel quantum design scheme named the quasi one-well (Q1W) design, in which each quantum cascade period consists of only three semiconductor layers. This design is the narrowest of all existing THz QCL structures to date. We explore a series of the Q1W designs using the non-equilibrium green function (NEGF) and rate-equation (RE) models. Both models show that the Q1W designs exhibit the potential to achieve sufficient optical gain with low-temperature sensitivity. Our simulation results suggest that this novel Q1W scheme may potentially lead to relatively less temperature-sensitive THz QCLs. The thickness of the Q1W scheme is less than 20 nm per period, which is the narrowest of the reported THz QCL schemes.

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Available abstract

Developing a high-temperature terahertz (THz) quantum cascade laser (QCL) has been one of the major challenges in the THz QCL field over recent decades. The maximum lasing temperature of THz QCLs has gradually been increased, arguably by shortening the length of repeating periods of the quantum structure in the device’s active region from 7 wells/14 layers to 2 wells/4 layers per period. The current highest operating temperature of 250 K was achieved in a two-well direct-phonon design. In this paper, we propose a potential and promising novel quantum design scheme named the quasi one-well (Q1W) design, in which each quantum cascade period consists of only three semiconductor layers. This design is the narrowest of all existing THz QCL structures to date. We explore a series of the Q1W designs using the non-equilibrium green function (NEGF) and rate-equation (RE) models. Both models show that the Q1W designs exhibit the potential to achieve sufficient optical gain with low-temperature sensitivity. Our simulation results suggest that this novel Q1W scheme may potentially lead to relatively less temperature-sensitive THz QCLs. The thickness of the Q1W scheme is less than 20 nm per period, which is the narrowest of the reported THz QCL schemes.

Key concepts: Terahertz radiation, Cascade, Lasing threshold, Quantum cascade laser, Optoelectronics, Quantum well, Laser, Quantum

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