2006•The Proceedings of the Asian Symposium on Materials and ProcessingOpen access
A-15 Oxidation Mechanisms of Reaction-Bonded Silicon Nitride(Session: Ceramics III)
Kannigar Dateraksa, Kuljira Sujirote
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Abstract
The oxidation behavior of porous reaction-bonded silicon nitride has been investigated in the temperature range 900-1400℃ for up to 3 hours by the Simultaneous Thermal Analysis technique. The mechanism of oxidation is complex and depends critically on the temperature. At low temperatures in excess oxygen, a protective silica film is formed by passive oxidation. The low P_ in pores beneath the film leads to active oxidation of both the silicon nitride and silicon oxynitride which may be formed during fabrication process. A model for the roles of the silica film and the silicon oxynitride was proposed and discussed.
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