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2010•電子情報通信学会技術研究報告. ICD, 集積回路Requires access

SRAMの技術動向と定負電位書込み回路を用いた32nm 0.149μm^2セル低電圧コンフィギュラブルSRAM(低電力SRAM/DRAM,メモリ(DRAM, SRAM,フラッシュ,新規メモリ)技術)

勇樹 藤村, Osamu Hirabayashi, 貴彦 佐々木, 東 鈴木, 篤 川澄, Yasuhisa Takeyama, 桂一 櫛田, 剛 深野, 明 片山, 祐介 仁木, Tomoaki Yabe

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Key concepts: Static random-access memory, Dram, Universal memory, Random access memory, Computer science, Embedded system, Semiconductor memory, Memory management

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SRAMの技術動向と定負電位書込み回路を用いた32nm 0.149μm^2セル低電圧コンフィギュラブルSRAM(低電力SRAM/DRAM,メモリ(DRAM, SRAM,フラッシュ,新規メモリ)技術) — Research Paper | ScholarLens