2005Unpublished venueRequires access

A Ka-band Harmonic Miter Design Using Multiplier Theory

Min‐Ho Go, Kang Suk-Youb, Hyo-Dal Park

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Abstract

In this paper, a Ka-band harmonic mixer is designed and fabricated on the base of the multiplier theory that there is a bias point to maximize the third harmonic order() with respect to a fundamental LO frequency(), which can make the high-order mixing element() to be greater than other mixing elements, Pumping a RF frequency() and LO frequency(). The harmonic mixer by the proposed design method is fabricated by using a commercial GaAs MESFET device with a plastic package and overcome these disadvantages that a conventional mixer in Ka-band suffer from a high cost, inefficient productivity and circuit complexity. The harmonic mixer have a -10 dB conversion loss at the IF Sequency(=1.0GHz) by selecting a gate bias voltage for the maximum third-order LO harmonic element(=34.5 GHz) as pumping LO frequency(=11.5 GHz) With respect to RF Sequency (=33.5GHz)

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What this paper is about

In this paper, a Ka-band harmonic mixer is designed and fabricated on the base of the multiplier theory that there is a bias point to maximize the third harmonic order() with respect to a fundamental LO frequency(), which can make the high-order mixing element() to be greater than other mixing elements, Pumping a RF frequency() and LO frequency(). The harmonic mixer by the proposed design method is fabricated by using a commercial GaAs MESFET device with a plastic package and overcome these disadvantages that a conventional mixer in Ka-band suffer from a high cost, inefficient productivity and circuit complexity. The harmonic mixer have a -10 dB conversion loss at the IF Sequency(=1.0GHz) by selecting a gate bias voltage for the maximum third-order LO harmonic element(=34.5 GHz) as pumping LO frequency(=11.5 GHz) With respect to RF Sequency (=33.5GHz)

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Available abstract

In this paper, a Ka-band harmonic mixer is designed and fabricated on the base of the multiplier theory that there is a bias point to maximize the third harmonic order() with respect to a fundamental LO frequency(), which can make the high-order mixing element() to be greater than other mixing elements, Pumping a RF frequency() and LO frequency(). The harmonic mixer by the proposed design method is fabricated by using a commercial GaAs MESFET device with a plastic package and overcome these disadvantages that a conventional mixer in Ka-band suffer from a high cost, inefficient productivity and circuit complexity. The harmonic mixer have a -10 dB conversion loss at the IF Sequency(=1.0GHz) by selecting a gate bias voltage for the maximum third-order LO harmonic element(=34.5 GHz) as pumping LO frequency(=11.5 GHz) With respect to RF Sequency (=33.5GHz)

Key concepts: Harmonic mixer, Frequency multiplier, Harmonic, MESFET, Frequency mixer, Harmonic analysis, Electrical engineering, Electronic engineering

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