A study of 10-bit 2-MS/s Successive Approximation Register ADC with low power in 180nm technology
Nam Anh Ha, Trang Hoang
Abstract
Nam Anh Ha, Trang Hoang
Abstract
This paper presents Successive Approximation Register (SAR) ADC design in 180nm TSMC technology. The ADC can provide a high effective number of bits (ENOB), high speed and low power. At a 1.8-V supply and 2 MS/s, our design achieves an SNDR of 59.5 dB, ENOB 9.59 bit and consumes 1.17 mW, resulting in a figure of merit (FOM) of 759 fJ/conversion-step. To attain the mentioned results, the SAR architecture is proposed to use SAR ADC fully differential with S/H circuit, Capacitive DAC, Dynamic latch comparator, SAR Logic.
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This paper presents Successive Approximation Register (SAR) ADC design in 180nm TSMC technology. The ADC can provide a high effective number of bits (ENOB), high speed and low power. At a 1.8-V supply and 2 MS/s, our design achieves an SNDR of 59.5 dB, ENOB 9.59 bit and consumes 1.17 mW, resulting in a figure of merit (FOM) of 759 fJ/conversion-step. To attain the mentioned results, the SAR architecture is proposed to use SAR ADC fully differential with S/H circuit, Capacitive DAC, Dynamic latch comparator, SAR Logic.
Key concepts: Effective number of bits, Successive approximation ADC, Comparator, Shaping, Figure of merit, Computer science, CMOS, Electronic engineering