2021The Japan Society of Applied PhysicsRequires access

Density of States Analysis of an Amorphous In-Ga-Zn-O Thin Film studied via High-Sensitivity Ultraviolet, Hard X-ray, and Low-Energy Inverse Photoemission Spectroscopies

Ryotaro Nakazawa, Atsushi Matsuzaki, Kohei Shimizu, Emi Kawashima, Satoshi Yasuno, Adbi-Jalebi Mojtaba, Stranks D. Samuel, Yoshida Hiroyuki, Yuya Tanaka, Hiroshi Tokairin, Ishii Hisao

Open publisher page 0 citations

Abstract

This record does not include an abstract. Use the full-text link above if available.

About this research paper

What this paper is about

An abstract is not available in the OpenAlex record for this paper.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Key concepts: Materials science, Ultraviolet, Amorphous solid, Sensitivity (control systems), Inverse photoemission spectroscopy, Thin film, Inverse, Energy (signal processing)

Related papers

Back to paper searchBrowse research topicsOriginal source
Density of States Analysis of an Amorphous In-Ga-Zn-O Thin Film studied via High-Sensitivity Ultraviolet, Hard X-ray, and Low-Energy Inverse Photoemission Spectroscopies — Research Paper | ScholarLens