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2021•Microelectronics ReliabilityOpen access

Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC

Yasin Gunaydin, Saeed Jahdi, Olayiwola M. Alatise, Jose Ortiz Gonzalez, Ruizhu Wu, Bernard H. Stark, Mohammad Hassan Hedayati, Xibo Yuan, Phil H. Mellor

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Key concepts: Cascode, JFET, Materials science, Optoelectronics, Wide-bandgap semiconductor, Gallium nitride, High-electron-mobility transistor, Silicon carbide

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Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC — Research Paper | ScholarLens