Modification of structural and transport properties in epitaxial YBa 2 Cu 3 O x films by pulsed laser irradiation

\nPulsed (~20 ns) laser effects in epitaxial YBa$_2$CU$_3$O$_x$/SrTiO$_3$ thin films were investigated, using RBS/channeling for compositional and structural characterization and 4-point technique for electrical measurements. It was found that laser pulse melting and following quenching lead to a transition from a single-crystalline to a polycrystalline state in films. The formation of grain boundaries causes a room temperature electrical resistivity increase by a factor 10-40, depending on the initial film properties and on the irradiation conditions. Unlike corpuscular (ions, neutrons) irradiation, the laser pulse induced structural damage did not lead to the disappearance of HTS, which persisted up to the highest laser fluences used. It was found, that a thermal model can consistently describe the fluence dependence of disorder, depth of surface relief and helps, with a simple two-layer model, in understanding of fluence dependence of room temperature resistivity in a relatively thick film.\n