Photoconductivity effect in SnTe quantum well
G. R. F. Lopes, S. de Castro, Bianca Akemi Kawata, P. H. O. Rappl, E. Abramof, M. L. Peres
Abstract
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G. R. F. Lopes, S. de Castro, Bianca Akemi Kawata, P. H. O. Rappl, E. Abramof, M. L. Peres
Abstract
Open-access reader
We investigated the photoconductivity effect observed in a p-type SnTe quantum well in the temperature range of 1.9–100 K. The negative photoconductivity effect is observed for temperatures below 4 K, and it is strongly dependent on the light wavelength. A systematic analysis of the photoconductivity indicates that the origin of the negative photoconductivity is not related to the topological surface states but rather to the reduction of carrier mobility when the SnTe quantum well is illuminated with energies above 2 eV.
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We investigated the photoconductivity effect observed in a p-type SnTe quantum well in the temperature range of 1.9–100 K. The negative photoconductivity effect is observed for temperatures below 4 K, and it is strongly dependent on the light wavelength. A systematic analysis of the photoconductivity indicates that the origin of the negative photoconductivity is not related to the topological surface states but rather to the reduction of carrier mobility when the SnTe quantum well is illuminated with energies above 2 eV.
Key concepts: Photoconductivity, Condensed matter physics, Materials science, Quantum well, Optoelectronics, Range (aeronautics), Wavelength, Electrical resistivity and conductivity