20212021 IEEE 4th International Conference on Electronics Technology (ICET)Requires access

A DC-4GHz 6-Bit Digital Attenuator with High Accuracy and Low Insertion Loss

Yibing Wu, Jianquan Hu, Kaixue Ma

Open publisher page 7 citations

Abstract

A DC to 4 GHz 6-bit digital attenuator with high accuracy and low insertion loss by enhancement/depletion (E/D) mode GaAs pseudomorphic high electron-mobility transistor (pHEMT) process is presented in this paper. The digital attenuator achieves a 31.5dB dynamic attenuation range stepped by 0.5dB with smaller than 2dB insertion loss and less than 0.36dB RMS attenuation error. The input and output return loss is less than -10dB for all attenuation states from DC to 4 GHz. Meanwhile the digital attenuator has built-in logic driving circuit which simplifies the control logic into a 6-bit positive voltage control. The total chip size is 2.7mm×1.95mm × 0.1 mm.

About this research paper

What this paper is about

A DC to 4 GHz 6-bit digital attenuator with high accuracy and low insertion loss by enhancement/depletion (E/D) mode GaAs pseudomorphic high electron-mobility transistor (pHEMT) process is presented in this paper. The digital attenuator achieves a 31.5dB dynamic attenuation range stepped by 0.5dB with smaller than 2dB insertion loss and less than 0.36dB RMS attenuation error. The input and output return loss is less than -10dB for all attenuation states from DC to 4 GHz. Meanwhile the digital attenuator has built-in logic driving circuit which simplifies the control logic into a 6-bit positive voltage control. The total chip size is 2.7mm×1.95mm × 0.1 mm.

Why it matters

OpenAlex reports 7 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

A DC to 4 GHz 6-bit digital attenuator with high accuracy and low insertion loss by enhancement/depletion (E/D) mode GaAs pseudomorphic high electron-mobility transistor (pHEMT) process is presented in this paper. The digital attenuator achieves a 31.5dB dynamic attenuation range stepped by 0.5dB with smaller than 2dB insertion loss and less than 0.36dB RMS attenuation error. The input and output return loss is less than -10dB for all attenuation states from DC to 4 GHz. Meanwhile the digital attenuator has built-in logic driving circuit which simplifies the control logic into a 6-bit positive voltage control. The total chip size is 2.7mm×1.95mm × 0.1 mm.

Key concepts: Attenuator (electronics), Insertion loss, Return loss, Materials science, Attenuation, Optical attenuator, Optoelectronics, Electrical engineering

Related papers

Back to paper searchBrowse research topicsOriginal source
A DC-4GHz 6-Bit Digital Attenuator with High Accuracy and Low Insertion Loss — Research Paper | ScholarLens