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2021•Unpublished venueRequires access

Ultra-Low Switching Loss Triple-Gate controlled IGBT

Tatsunori Sakano, Kazuto Takao, Yoko Iwakaji, Hiroko Itokazu, Tomoko Matsudai

Open publisher page 13 citations

Abstract

A triple-gate 1.2-kV Si-insulated-gate bipolar transistor (TG-IGBT) is proposed in order to drastically improve both turn-on loss (Eon) and turn-off loss (Eoff) by using a novel gate drive control technique. In this work, we fabricated a 1.2-kV TG-IGBT that achieved 50% and 28% Eon and Eoff reduction, respectively, compared with a conventional single-gate IGBT. This result indicates that it is possible to overcome the limitations of Si by optimizing the device structure and gate drive control.

About this research paper

What this paper is about

A triple-gate 1.2-kV Si-insulated-gate bipolar transistor (TG-IGBT) is proposed in order to drastically improve both turn-on loss (Eon) and turn-off loss (Eoff) by using a novel gate drive control technique. In this work, we fabricated a 1.2-kV TG-IGBT that achieved 50% and 28% Eon and Eoff reduction, respectively, compared with a conventional single-gate IGBT. This result indicates that it is possible to overcome the limitations of Si by optimizing the device structure and gate drive control.

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OpenAlex reports 13 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A triple-gate 1.2-kV Si-insulated-gate bipolar transistor (TG-IGBT) is proposed in order to drastically improve both turn-on loss (Eon) and turn-off loss (Eoff) by using a novel gate drive control technique. In this work, we fabricated a 1.2-kV TG-IGBT that achieved 50% and 28% Eon and Eoff reduction, respectively, compared with a conventional single-gate IGBT. This result indicates that it is possible to overcome the limitations of Si by optimizing the device structure and gate drive control.

Key concepts: Insulated-gate bipolar transistor, Gate driver, Current injection technique, Gate turn-off thyristor, Materials science, Logic gate, Transistor, Electrical engineering

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