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Low Temperature Dependence of the Device Parameters of Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche Photodiodes

An, Deen, Tarof

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Key concepts: Avalanche photodiode, Optoelectronics, Indium gallium arsenide, Photodiode, Materials science, Absorption (acoustics), Gallium arsenide, Optics

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Low Temperature Dependence of the Device Parameters of Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche Photodiodes — Research Paper | ScholarLens