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2002•UCL Discovery (University College London)Requires access

A simple, effective tight-binding parametrization for Si-Ge interactions on Si(001)

Bowler

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Abstract

We describe a simple yet extremely effective tight-binding parametrization for Ge-Ge and Si-Ge interactions in near-tetrahedral bonding situations, in particular on the (001) surface of Si and Ge, and present results of tests on various systems (including ad-dimers of Ge and the square structure found during gas-source growth).

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What this paper is about

We describe a simple yet extremely effective tight-binding parametrization for Ge-Ge and Si-Ge interactions in near-tetrahedral bonding situations, in particular on the (001) surface of Si and Ge, and present results of tests on various systems (including ad-dimers of Ge and the square structure found during gas-source growth).

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Available abstract

We describe a simple yet extremely effective tight-binding parametrization for Ge-Ge and Si-Ge interactions in near-tetrahedral bonding situations, in particular on the (001) surface of Si and Ge, and present results of tests on various systems (including ad-dimers of Ge and the square structure found during gas-source growth).

Key concepts: Parametrization (atmospheric modeling), Tight binding, Tetrahedron, Simple (philosophy), Germanium, Square (algebra), Materials science, Binding energy

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