In situ micro-Raman spectroscopic study of laser-induced crystallization of amorphous silicon thin films on aluminum-doped zinc oxide substrate

The effects of laser irradiation condition and deposition substrate on the laser crystallized 330 nm Si films structure were investigated using in situ micro- Raman spectroscopy. Results showed that crystallization of amorphous silicon (a-Si) films started at laser irradiation power density of 0.6 9 10 5 W/cm 2 for 20 s. The crystal- line volume fraction of Si films depended mostly on the laser power density but not on the laser irradiation time. The Si films on both smooth and textured aluminum-doped zinc oxide (AZO) substrates exhibited lower crystalline volume fraction and smaller average grain size than the Si films on glass did. The Si films on textured AZO revealed higher crystalline volume fraction and larger average grain size than the Si films on smooth AZO did. The stress in crystalline Si films was observed to be compressive on AZO and tensile on glass. The compressive stress in crystalline Si films on textured AZO was slightly less than that on smooth AZO. The present work indicated that the structure of crystalline Si films on textured AZO was improved than that on smooth AZO, which may be helpful to crystalline Si thin-film solar cell.