2021•Semiconductor Physics Quantum Electronics & OptoelectronicsOpen access

Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime

Abdelhakim Latreche

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Abstract

In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.

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What this paper is about

In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.

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Available abstract

In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.

Key concepts: Thermionic emission, Schottky diode, Schottky effect, Schottky barrier, Diode, Current (fluid), Field (mathematics), Metal–semiconductor junction

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Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime — Research Paper | ScholarLens