Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime
Abdelhakim Latreche
Abstract
Abdelhakim Latreche
Abstract
In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.
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In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.
Key concepts: Thermionic emission, Schottky diode, Schottky effect, Schottky barrier, Diode, Current (fluid), Field (mathematics), Metal–semiconductor junction