New Nonvolatile Static Memory Cell based on Nanoelectromechanical Device

The application of nanoelectromechanical (NEM) memory switches to memory cell has been proposed. This memory cell has a nonvolatile property. The memory cell can be designed by using one NEM device and four transistors. The area of the memory array using the proposed cell can be reduced compared to conventional SRAM because metal interconnect layers are used for memory storage. Though the writing speed is slower than the conventional memory due to the mechanical beam movement to store data. However, it provides fast reading and nonvolatile property.