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2020•Unpublished venueRequires access

A high reliable low noise frequency synthesizer design

Ze Cheng, Weiming Li, Dianwei Zhang, Qiliang Chen

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Abstract

A high reliable and low noise frequency synthesizer was designed and manufactured by 0.18um SiGe BiCMOS process. The innovation of this paper is to use HBT with better 1/f noise performance to replace MOS transistor to obtain better noise performance. The frequency synthesizer circuit is capable of producing 1.7GHz-2.3GHz RF output signal (one of the VCO output bands); The operating frequency of the frequency synthesizer is 800MHz-5GHz. The normalized phase noise of the frequency synthesizer reaches -230 dBc /Hz.

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What this paper is about

A high reliable and low noise frequency synthesizer was designed and manufactured by 0.18um SiGe BiCMOS process. The innovation of this paper is to use HBT with better 1/f noise performance to replace MOS transistor to obtain better noise performance. The frequency synthesizer circuit is capable of producing 1.7GHz-2.3GHz RF output signal (one of the VCO output bands); The operating frequency of the frequency synthesizer is 800MHz-5GHz. The normalized phase noise of the frequency synthesizer reaches -230 dBc /Hz.

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Available abstract

A high reliable and low noise frequency synthesizer was designed and manufactured by 0.18um SiGe BiCMOS process. The innovation of this paper is to use HBT with better 1/f noise performance to replace MOS transistor to obtain better noise performance. The frequency synthesizer circuit is capable of producing 1.7GHz-2.3GHz RF output signal (one of the VCO output bands); The operating frequency of the frequency synthesizer is 800MHz-5GHz. The normalized phase noise of the frequency synthesizer reaches -230 dBc /Hz.

Key concepts: Phase noise, Frequency synthesizer, dBc, Direct digital synthesizer, Voltage-controlled oscillator, Electronic engineering, BiCMOS, Electrical engineering

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