Egidijus Vanagas, R. Gofman, S. Strumskis
Abstract
Laser dicing technique – rapid (in the range 300-1000 mm/s), one pass process for semiconductor devices formed on silicon substrates. The technique allows straight and curved “clean” cleaving of silicon. © 2020 The Author(s).
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Laser dicing technique – rapid (in the range 300-1000 mm/s), one pass process for semiconductor devices formed on silicon substrates. The technique allows straight and curved “clean” cleaving of silicon. © 2020 The Author(s).
Key concepts: Wafer dicing, Silicon, Wafer, Materials science, Semiconductor, Optoelectronics, Hybrid silicon laser, Semiconductor device