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Electronic Structure and Carrier Trapping Properties of Mobility Gap States in Amorphous Silicon-Germanium Alloys.

Thomas Unold

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Key concepts: Germanium, Trapping, Materials science, Silicon, Amorphous solid, Amorphous silicon, Amorphous semiconductors, Optoelectronics

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Electronic Structure and Carrier Trapping Properties of Mobility Gap States in Amorphous Silicon-Germanium Alloys. — Research Paper | ScholarLens