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2020•Unpublished venueRequires access

A Distributed Power Amplifier Design with a High Power Gain

Elham Amiri, Mojtaba Joodaki, Mehdi Forouzanfer, Gunter Kompa

Open publisher page 4 citations

Abstract

In this paper we present a distributed power amplifier that has a good gain-bandwidth product in comparison with other recent discrete distributed power amplifiers. A TGF2023-01 bare die transistor with .25μm GaN HEMT technology is utilized in our work. Our distributed power amplifier provides a better matching that leads to a more flat frequency response and uses tapering technique for both gate and drain transmission lines to boost the output power and efficiency. This design demonstrates a 41.6 dBm saturated power and a 22.2 dB small signal gain from DC to 3.4 GHz with a power added efficiency (PAE) of 27%.

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What this paper is about

In this paper we present a distributed power amplifier that has a good gain-bandwidth product in comparison with other recent discrete distributed power amplifiers. A TGF2023-01 bare die transistor with .25μm GaN HEMT technology is utilized in our work. Our distributed power amplifier provides a better matching that leads to a more flat frequency response and uses tapering technique for both gate and drain transmission lines to boost the output power and efficiency. This design demonstrates a 41.6 dBm saturated power and a 22.2 dB small signal gain from DC to 3.4 GHz with a power added efficiency (PAE) of 27%.

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OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this paper we present a distributed power amplifier that has a good gain-bandwidth product in comparison with other recent discrete distributed power amplifiers. A TGF2023-01 bare die transistor with .25μm GaN HEMT technology is utilized in our work. Our distributed power amplifier provides a better matching that leads to a more flat frequency response and uses tapering technique for both gate and drain transmission lines to boost the output power and efficiency. This design demonstrates a 41.6 dBm saturated power and a 22.2 dB small signal gain from DC to 3.4 GHz with a power added efficiency (PAE) of 27%.

Key concepts: RF power amplifier, Power bandwidth, Amplifier, Distributed amplifier, Power-added efficiency, Power gain, Electrical engineering, Linear amplifier

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