2009•Unpublished venueRequires access

Power Semiconductor Devices

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Abstract

This chapter contains sections titled: Perspective on Power Devices Principal High-Power Device Characteristics and Requirements Power Device Material Diode (Pn Junction) Transistor Thyristor (without Turn-Off Capability) Gate Turn-Off Thyristor (GTO) MOS Turn-Off Thyristor (MTO) Emitter Turn-Off Thyristor (ETO) Integrated Gate-Commutated Thyristor (GCT and IGCT) Insulated Gate Bipolar Transistor (IGBT) MOS-Controlled Thyristor (MCT) This chapter contains sections titled: References ]]>

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Key concepts: Semiconductor, Power (physics), Semiconductor device, Electrical engineering, Materials science, Optoelectronics, Engineering, Physics