A 2-stage D-band Power Amplifier with 7 dBm Output Power at 0.14 THz in a 0.13μm SiGe Technology
Peng Zhang, Lin He, Yufeng Guo, Xiaohua Fan, Hao Gao
Abstract
Peng Zhang, Lin He, Yufeng Guo, Xiaohua Fan, Hao Gao
Abstract
In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The ft and fmax of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the fmax whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the CCE reduction layout optimization method to increase the output power. This D-band PA achieves a P1dB and Psat of 0.5 dBm and 7.1 dBm, respectively.
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In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13 μm SiGe:C BiCMOS technology. The ft and fmax of this technology are 250GHz and 400GHz respectively. Due to the technology limitation, this work is close to the half of the fmax whose performance is mainly limited by the parasitic. In this work, a two-stage differential cascode topology with transformer and inter-stage coupling is implemented with the CCE reduction layout optimization method to increase the output power. This D-band PA achieves a P1dB and Psat of 0.5 dBm and 7.1 dBm, respectively.
Key concepts: dBm, Cascode, Amplifier, Terahertz radiation, Electrical engineering, Transformer, Silicon-germanium, Optoelectronics