2019•Extended Abstracts of the 2019 International Conference on Solid State Devices and MaterialsRequires access

Structural characterizations of GaN nanowires and GaInN/GaN multi-quantum shells grown by MOVPE

Nanami Goto, Weifang Lu, Hideyuki Murakami, Mitsuki Terazawa, Jun Uzuhashi, Tetsushi Sekiguchi, Takashi Ohkubo, J. Chen, Wei Yi, K. Hono, Satoshi Kamiyama, Tatsuya Takeuchi, Motoaki Iwaya, I. Akasaki

Open publisher page 0 citations

Abstract

This record does not include an abstract. Use the full-text link above if available.

About this research paper

What this paper is about

An abstract is not available in the OpenAlex record for this paper.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Key concepts: Materials science, Metalorganic vapour phase epitaxy, Nanowire, Optoelectronics, Gallium nitride, Quantum, Nanotechnology, Epitaxy