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Strained INDIUM(0.52)ALUMINUM(0.48)ARSENIDE/ INDIUM(X)GALLIUM(1-X)ARSENIDE (x > 0.53) High Electron Mobility Transistors (hemt's) for Millimeter-Wave Applications

Geok Ing Ng

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Key concepts: Gallium arsenide, High-electron-mobility transistor, Indium arsenide, Indium, Indium gallium arsenide, Materials science, Extremely high frequency, Optoelectronics

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Strained INDIUM(0.52)ALUMINUM(0.48)ARSENIDE/ INDIUM(X)GALLIUM(1-X)ARSENIDE (x > 0.53) High Electron Mobility Transistors (hemt's) for Millimeter-Wave Applications — Research Paper | ScholarLens