1975•OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)Requires access
Influence of ion implantation on the surface properties of metals and alloys. Final report, 1 Sep 1971--31 Aug 1975
W. A. Grant, G. Carter
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Abstract
Initially efforts were directed towards ion implantation of semiconductors, in particular GaP and GaAs. The main analysis technique employed was high energy Rutherford scattering combined with channelling. Measurements were made of the damage resulting from implantation of Te in GaP, together with the annealing of the damage and the lattice location of the Te. Parallel work on implantation of GaAs has also continued with particular reference to the effect of the dose rate employed during implantation. It has been found that the amount of damage resulting from a given implantation dose in GaAs can be altered by changing the dose rate. This effect may possibly be applicable to other materials and should lead to a better understanding of collision cascades in solids. (GRA)