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Piezoelectric indium gallium arsenide/gallium arsenide strained quantum well structures on (111)A gallium arsenide: MOVPE growth, properties, and application to semiconductor lasers

Jongseok Kim

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Key concepts: Gallium arsenide, Indium arsenide, Metalorganic vapour phase epitaxy, Materials science, Gallium, Indium, Optoelectronics, Arsenide

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Piezoelectric indium gallium arsenide/gallium arsenide strained quantum well structures on (111)A gallium arsenide: MOVPE growth, properties, and application to semiconductor lasers — Research Paper | ScholarLens