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Ion-beam-assisted deposition of metal oxide optical thin films

James J. McNally, Ghanim A. Al-Jumaily, J. R. McNeil

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Abstract

The properties of dielectric (Al2O3, Ta2O5, HfO2, and TiO2) films deposited using ion beam assisted deposition (IAD) have been examined. Previously1 we have described the importance of oxygen-ion energy and flux in applying IAD to dielectric materials and examined some of the properties of TiO2 and SiO2 films. In this work we present results illustrating ion bombardment effects on the thin film properties of Al2O3, Ta2O5, and HfO2; in particular, film stoichiometry is strongly dependent on the ion beam flux and energy, a reduction in optical scatter is observed, and higher values of refractive index are obtained for films deposited with simultaneous O 2 + bombardment. Also, in certain cases, Raman spectroscopy indicates a crystalline phase change is induced by the O2 bombardment of samples during film deposition.

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What this paper is about

The properties of dielectric (Al2O3, Ta2O5, HfO2, and TiO2) films deposited using ion beam assisted deposition (IAD) have been examined. Previously1 we have described the importance of oxygen-ion energy and flux in applying IAD to dielectric materials and examined some of the properties of TiO2 and SiO2 films. In this work we present results illustrating ion bombardment effects on the thin film properties of Al2O3, Ta2O5, and HfO2; in particular, film stoichiometry is strongly dependent on the ion beam flux and energy, a reduction in optical scatter is observed, and higher values of refractive index are obtained for films deposited with simultaneous O 2 + bombardment. Also, in certain cases, Raman spectroscopy indicates a crystalline phase change is induced by the O2 bombardment of samples during film deposition.

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Available abstract

The properties of dielectric (Al2O3, Ta2O5, HfO2, and TiO2) films deposited using ion beam assisted deposition (IAD) have been examined. Previously1 we have described the importance of oxygen-ion energy and flux in applying IAD to dielectric materials and examined some of the properties of TiO2 and SiO2 films. In this work we present results illustrating ion bombardment effects on the thin film properties of Al2O3, Ta2O5, and HfO2; in particular, film stoichiometry is strongly dependent on the ion beam flux and energy, a reduction in optical scatter is observed, and higher values of refractive index are obtained for films deposited with simultaneous O 2 + bombardment. Also, in certain cases, Raman spectroscopy indicates a crystalline phase change is induced by the O2 bombardment of samples during film deposition.

Key concepts: Materials science, Thin film, Analytical Chemistry (journal), Dielectric, Deposition (geology), Ion, Ion beam, Raman spectroscopy

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