Dataset for TiN Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium (TDMAT) and Titanium Tetrachloride (TiCl4) Precursor

A dataset in this report is regarding an article “Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells” [1]. TiN (Titanium Nitride) thin films were deposited by Plasma-Enhanced Atomic Layer Deposition (PEALD) method using well known two types of precursor: using tetrakis(dimethylamino)titanium (TDMAT) and titanium tetrachloride (TiCl4), and plasma. Summarized reports, growth characteristics (growth rate as a function of each precursor pulse time, plasma power, precursor and plasma purge time, thickness depending on the number of PEALD cycles), each precursor structural information and the atomic force micrographs (AFM) data are herein demonstrated. For TDMAT-TiN, N2 plasma was used as a reactant whereas, H2+N2 plasma was used as TiCl4-TiN reactant. To apply the bipolar plate substrate, two types of TiN thin films were introduced into Stainless steel (SUS) 316L.