An investigation of the properties of indium antimonide/aluminum(x) indium(1-x) antimonide quantum wells
Fred Burton Brown
Abstract
Fred Burton Brown
Abstract
This work investigates InSb/AlxIn1- xSb quantum wells through the use of Fourier Transform Infrared (FTIR) Spectroscopy. In addition to briefly examining excitonic transitions in undoped square wells, this work covers a detailed investigation into the dependence of the AlxIn(1-x)Sb band gap on aluminum concentration and temperature. Following this is the determination of the band offset in the InSb/AlxIn1- xSb quantum well system by observing "forbidden" exciton transitions in parabolic quantum wells. It is important to know this value both from an engineering and a theoretical point of view as it can significantly affect the number of electron-hole transitions available.
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This work investigates InSb/AlxIn1- xSb quantum wells through the use of Fourier Transform Infrared (FTIR) Spectroscopy. In addition to briefly examining excitonic transitions in undoped square wells, this work covers a detailed investigation into the dependence of the AlxIn(1-x)Sb band gap on aluminum concentration and temperature. Following this is the determination of the band offset in the InSb/AlxIn1- xSb quantum well system by observing "forbidden" exciton transitions in parabolic quantum wells. It is important to know this value both from an engineering and a theoretical point of view as it can significantly affect the number of electron-hole transitions available.
Key concepts: Indium antimonide, Antimonide, Indium, Aluminium, Materials science, Semiconductor materials, Quantum well, Metallurgy