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The Structure and Behavior of Point Defects in Silicon Oxynitride Gate Dielectrics: AN Electron Spin Resonance Study.

J. T. Yount

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Key concepts: Dielectric, Materials science, Silicon, Condensed matter physics, Electron paramagnetic resonance, Electron, Silicon oxynitride, High-κ dielectric

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The Structure and Behavior of Point Defects in Silicon Oxynitride Gate Dielectrics: AN Electron Spin Resonance Study. — Research Paper | ScholarLens