2008•Unpublished venueRequires access

Ammonia molecular beam epitaxy of (aluminum,gallium) nitride for aluminum gallium nitride/gallium nitride high electron mobility transistors

A. Corrion

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Key concepts: Gallium nitride, Materials science, Gallium, Nitride, Molecular beam epitaxy, Aluminium, Optoelectronics, Epitaxy

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Ammonia molecular beam epitaxy of (aluminum,gallium) nitride for aluminum gallium nitride/gallium nitride high electron mobility transistors — Research Paper | ScholarLens