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Lateral Modulation-Doped Structures of Aluminum - Arsenide/gallium Arsenide Grown by Selective Area Liquid-Phase Epitaxy

M. Frei

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Key concepts: Gallium arsenide, Arsenide, Materials science, Epitaxy, Doping, Indium arsenide, Aluminium, Optoelectronics

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Lateral Modulation-Doped Structures of Aluminum - Arsenide/gallium Arsenide Grown by Selective Area Liquid-Phase Epitaxy — Research Paper | ScholarLens