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Novel Optoelectronic Devices Using Intersubband Transitions in Gallium Arsenide/aluminum Gallium Arsenide Quantum Wells and Superlattices: Theory, Fabrication, and Measurement

Sueh-Wen Siao

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Key concepts: Gallium arsenide, Superlattice, Optoelectronics, Arsenide, Fabrication, Materials science, Gallium, Quantum well

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Novel Optoelectronic Devices Using Intersubband Transitions in Gallium Arsenide/aluminum Gallium Arsenide Quantum Wells and Superlattices: Theory, Fabrication, and Measurement — Research Paper | ScholarLens