ScholarLens Back to search
2019•Unpublished venueRequires access

A Q-Band Self-Biased LNA in 0.1-μm GaAs pHEMT Technology

Zuojun Wang, Debin Hou, Jixin Chen, Zhe Chen, Pinpin Yan, Li Zhang, Wei Hong

Open publisher page 13 citations

Abstract

This paper describes a wideband Q-band low noise amplifier (LNA) using the 0.1-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology. The LNA is implemented with a 4-stage self-biased common-source (CS) topology. A measured amplifier achieves a peak power gain of 28 dB, with a 3-dB bandwidth of 15 GHz centered at 43 GHz. The amplifier exhibits an output 1 dB gain compression point of 9.6 dBm. The on-wafer measured noise figure stays under 2.8 dB over the 3-dB bandwidth. An LNA module is designed and fabricated based on the chip. To the best of the authors' knowledge, the LNA exhibits one of the lowest noise figure among other reported wideband Q-band LNA using the same technology.

About this research paper

What this paper is about

This paper describes a wideband Q-band low noise amplifier (LNA) using the 0.1-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology. The LNA is implemented with a 4-stage self-biased common-source (CS) topology. A measured amplifier achieves a peak power gain of 28 dB, with a 3-dB bandwidth of 15 GHz centered at 43 GHz. The amplifier exhibits an output 1 dB gain compression point of 9.6 dBm. The on-wafer measured noise figure stays under 2.8 dB over the 3-dB bandwidth. An LNA module is designed and fabricated based on the chip. To the best of the authors' knowledge, the LNA exhibits one of the lowest noise figure among other reported wideband Q-band LNA using the same technology.

Why it matters

OpenAlex reports 13 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This paper describes a wideband Q-band low noise amplifier (LNA) using the 0.1-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology. The LNA is implemented with a 4-stage self-biased common-source (CS) topology. A measured amplifier achieves a peak power gain of 28 dB, with a 3-dB bandwidth of 15 GHz centered at 43 GHz. The amplifier exhibits an output 1 dB gain compression point of 9.6 dBm. The on-wafer measured noise figure stays under 2.8 dB over the 3-dB bandwidth. An LNA module is designed and fabricated based on the chip. To the best of the authors' knowledge, the LNA exhibits one of the lowest noise figure among other reported wideband Q-band LNA using the same technology.

Key concepts: Noise figure, High-electron-mobility transistor, Low-noise amplifier, Gallium arsenide, Amplifier, Wideband, Optoelectronics, Electrical engineering

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
A Q-Band Self-Biased LNA in 0.1-μm GaAs pHEMT Technology — Research Paper | ScholarLens