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2020•IEEE Electron Device LettersRequires access

Backward Diode Rectifying Behavior in AgCrO2/In2O3

Chenhui Li, Bingbing Yang, Renhuai Wei, Ling Hu, Xianwu Tang, Jie Yang, Xuebin Zhu, Yuping Sun

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Abstract

A backward diode consisting of all nondegenerate and transparent semiconducting oxides (TSOs) offers promising opportunities for designing multifunctional electronic devices. In this letter, we report the backward diode rectifying behavior in the nondegenerate AgCrO2/In2O3p-n heterojunction. Both AgCrO2and In2O3films are transparent. The decrease of grain boundary in the In2O3film can improve the backward diode rectifying performance. The optimized AgCrO2/In2O3heterojunction exhibits a very high reverse rectification ratio that exceeds 103along with a small tunneling current onset voltage. The backward diode rectifying behavior originates from the electron band-to-band tunneling (BTBT) current in the reverse voltage region, which is induced by type-III band alignment. This study will pave the way for achieving transparent backward diodes by using all nondegenerate TSOs p-n heterojunctions.

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What this paper is about

A backward diode consisting of all nondegenerate and transparent semiconducting oxides (TSOs) offers promising opportunities for designing multifunctional electronic devices. In this letter, we report the backward diode rectifying behavior in the nondegenerate AgCrO2/In2O3p-n heterojunction. Both AgCrO2and In2O3films are transparent. The decrease of grain boundary in the In2O3film can improve the backward diode rectifying performance. The optimized AgCrO2/In2O3heterojunction exhibits a very high reverse rectification ratio that exceeds 103along with a small tunneling current onset voltage. The backward diode rectifying behavior originates from the electron band-to-band tunneling (BTBT) current in the reverse voltage region, which is induced by type-III band alignment. This study will pave the way for achieving transparent backward diodes by using all nondegenerate TSOs p-n heterojunctions.

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Available abstract

A backward diode consisting of all nondegenerate and transparent semiconducting oxides (TSOs) offers promising opportunities for designing multifunctional electronic devices. In this letter, we report the backward diode rectifying behavior in the nondegenerate AgCrO2/In2O3p-n heterojunction. Both AgCrO2and In2O3films are transparent. The decrease of grain boundary in the In2O3film can improve the backward diode rectifying performance. The optimized AgCrO2/In2O3heterojunction exhibits a very high reverse rectification ratio that exceeds 103along with a small tunneling current onset voltage. The backward diode rectifying behavior originates from the electron band-to-band tunneling (BTBT) current in the reverse voltage region, which is induced by type-III band alignment. This study will pave the way for achieving transparent backward diodes by using all nondegenerate TSOs p-n heterojunctions.

Key concepts: Diode, Computer science, Physics, Optoelectronics

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