Nanoscale SiGe Double Gate MOSFET (DG-MOSFET) for Analog/RF Circuits

A simulation study of double-gate SiGe channel based metal-oxide-semiconductor field-effect transistor (DG-MOSFET) for low power analog/RF circuits is presented. The proposed device has two gates which are taken in trenches vertically to form two channels to improve output drive current (ID). In addition to this, the DG-MOSFET also achieves substantially enhancement in transconductance (gm) and frequency characteristics (ftand fmax). The simulation results of DG-MOSFET are compared with its conventional counterpart. At a gate-length of 60nm, DG-MOSFET gives 3.1 times improvement in ID, 2.9 times higher peak gm, 2 times increase in ftand 2.6 times higher fmaxas compare to conventional planar-counterpart (CP-MOSFET).