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2019•Unpublished venueOpen access

Solution-processed ultrathin SnO2 passivation of Absorber/Buffer Heterointerface and Grain Boundaries for High Efficiency Kesterite Cu2ZnSnS4 Solar Cells

Heng Sun, Jialiang Huang, Jae Sung Yun, Kaiwen Sun, Chang Yan, Fangyang Liu, Jongsung Park, Aobo Pu, Jan Seidel, John A. Stride, Martin A. Green, Xiaojing Hao

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Abstract

The ultrathin SnO2film, prepared by the successive ionic layer adsorption and reaction (SILAR) method, was applied between p-type Cu2ZnSnS4(CZTS) and n-type CdS layers to passivate the interface as well as the top section of CZTS grain boundaries. With the aid of this layer, electric properties have been significantly improved. The device efficiency improved from 6.82% to 8.47%, which is mainly contributed by the boost of fill factor (FF) and open circuit voltage (Voc). However, the further increase of SnO2thickness results in decreased Jscand FF. Kelvin Probe Force Microscopy (KPFM) unveils the passivation of grain boundaries (GBs) of CZTS with the SnO2coating. This work shows a new insight into the heterointerface and GBs passivation for high efficiency CZTS solar cells.

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The ultrathin SnO2film, prepared by the successive ionic layer adsorption and reaction (SILAR) method, was applied between p-type Cu2ZnSnS4(CZTS) and n-type CdS layers to passivate the interface as well as the top section of CZTS grain boundaries. With the aid of this layer, electric properties have been significantly improved. The device efficiency improved from 6.82% to 8.47%, which is mainly contributed by the boost of fill factor (FF) and open circuit voltage (Voc). However, the further increase of SnO2thickness results in decreased Jscand FF. Kelvin Probe Force Microscopy (KPFM) unveils the passivation of grain boundaries (GBs) of CZTS with the SnO2coating. This work shows a new insight into the heterointerface and GBs passivation for high efficiency CZTS solar cells.

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Available abstract

The ultrathin SnO2film, prepared by the successive ionic layer adsorption and reaction (SILAR) method, was applied between p-type Cu2ZnSnS4(CZTS) and n-type CdS layers to passivate the interface as well as the top section of CZTS grain boundaries. With the aid of this layer, electric properties have been significantly improved. The device efficiency improved from 6.82% to 8.47%, which is mainly contributed by the boost of fill factor (FF) and open circuit voltage (Voc). However, the further increase of SnO2thickness results in decreased Jscand FF. Kelvin Probe Force Microscopy (KPFM) unveils the passivation of grain boundaries (GBs) of CZTS with the SnO2coating. This work shows a new insight into the heterointerface and GBs passivation for high efficiency CZTS solar cells.

Key concepts: Passivation, CZTS, Grain boundary, Materials science, Analytical Chemistry (journal), Layer (electronics), Topology (electrical circuits), Physics

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Solution-processed ultrathin SnO2 passivation of Absorber/Buffer Heterointerface and Grain Boundaries for High Efficiency Kesterite Cu2ZnSnS4 Solar Cells — Research Paper | ScholarLens