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2009•Maǧallaẗ al-handasaẗ al-rāfidaynOpen access

Modeling of Nanocrystal Storage Cells

Labeeb Ali, S. M. T. Abdul Mawjoud, A. D. Mohammed Saleem

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Abstract

The computer program is prepared for applying Montecarlo simulation and modeling for single-electron nanocrystal memories. The nanocrystal memory device of (5×5) quantum dots is used for studying the relationship between, geometrical dimensions, electrical characteristics and charging effects for single electron static programming characteristics. The nanocrystal inter-dot effects are included. All parameters got in the memory simulation programming are studied and discussed. Keywords: Nanocrystal Memories.

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What this paper is about

The computer program is prepared for applying Montecarlo simulation and modeling for single-electron nanocrystal memories. The nanocrystal memory device of (5×5) quantum dots is used for studying the relationship between, geometrical dimensions, electrical characteristics and charging effects for single electron static programming characteristics. The nanocrystal inter-dot effects are included. All parameters got in the memory simulation programming are studied and discussed. Keywords: Nanocrystal Memories.

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Available abstract

The computer program is prepared for applying Montecarlo simulation and modeling for single-electron nanocrystal memories. The nanocrystal memory device of (5×5) quantum dots is used for studying the relationship between, geometrical dimensions, electrical characteristics and charging effects for single electron static programming characteristics. The nanocrystal inter-dot effects are included. All parameters got in the memory simulation programming are studied and discussed. Keywords: Nanocrystal Memories.

Key concepts: Nanocrystal, Quantum dot, Materials science, Nanotechnology, Computer science

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