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2019•Unpublished venueRequires access

Two-Fold Noise-Cancelling Low-Noise Amplifier in 28-nm CMOS

Amir Bozorg, Robert Bogdan Staszewski

Open publisher page 2 citations

Abstract

In this paper, a low-noise amplifier (LNA) employing a cross-coupled common-gate stage for wideband input matching is presented. By applying a two-fold noise cancellation technique, the channel thermal noise of the first stage is removed which improves its noise performance and linearity. We perform a detailed analysis of the transfer function, noise and linearity, which are then verified in simulations in TSMC 28-nm LP CMOS technology. The presented LNA achieves a power gain of 18.9-16 dB within 100 MHz up to 3.7 GHz and the input and output return loss of better than 10 dB. The IIP3 is +2.8 dBm and the noise figure (NF) ranges 1.58-2.4 dB over the band of interest with 24 mW DC power consumption.

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What this paper is about

In this paper, a low-noise amplifier (LNA) employing a cross-coupled common-gate stage for wideband input matching is presented. By applying a two-fold noise cancellation technique, the channel thermal noise of the first stage is removed which improves its noise performance and linearity. We perform a detailed analysis of the transfer function, noise and linearity, which are then verified in simulations in TSMC 28-nm LP CMOS technology. The presented LNA achieves a power gain of 18.9-16 dB within 100 MHz up to 3.7 GHz and the input and output return loss of better than 10 dB. The IIP3 is +2.8 dBm and the noise figure (NF) ranges 1.58-2.4 dB over the band of interest with 24 mW DC power consumption.

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Available abstract

In this paper, a low-noise amplifier (LNA) employing a cross-coupled common-gate stage for wideband input matching is presented. By applying a two-fold noise cancellation technique, the channel thermal noise of the first stage is removed which improves its noise performance and linearity. We perform a detailed analysis of the transfer function, noise and linearity, which are then verified in simulations in TSMC 28-nm LP CMOS technology. The presented LNA achieves a power gain of 18.9-16 dB within 100 MHz up to 3.7 GHz and the input and output return loss of better than 10 dB. The IIP3 is +2.8 dBm and the noise figure (NF) ranges 1.58-2.4 dB over the band of interest with 24 mW DC power consumption.

Key concepts: Noise figure, Low-noise amplifier, Effective input noise temperature, Linearity, CMOS, Noise temperature, Return loss, Electronic engineering

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Two-Fold Noise-Cancelling Low-Noise Amplifier in 28-nm CMOS — Research Paper | ScholarLens