2014•Unpublished venueOpen access

Tuning indium arsenide quantum dot electronic structure using (indium aluminum gallium)arsenide capping layers and application to infrared photodetectors

Eui‐Tae Kim

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Key concepts: Indium arsenide, Gallium arsenide, Indium, Optoelectronics, Photodetector, Quantum dot, Materials science, Infrared

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Tuning indium arsenide quantum dot electronic structure using (indium aluminum gallium)arsenide capping layers and application to infrared photodetectors — Research Paper | ScholarLens