2010•Unpublished venueRequires access

Growth of nitrogen-polar gallium nitride-based materials and high electron mobility transistors by metal organic chemical vapor deposition

David F. Brown

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Key concepts: Chemical vapor deposition, Gallium nitride, Nitrogen, Polar, Materials science, Nitride, Metal, Gallium

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Growth of nitrogen-polar gallium nitride-based materials and high electron mobility transistors by metal organic chemical vapor deposition — Research Paper | ScholarLens