Electromagnetic Simulation of CMOS On-Chip Spiral Inductors in 5 GHz band

Complementary metal oxide semiconductor (CMOS) circuits became applicable to radio frequency (RF) bands in the advanced CMOS process technology. On-chip spiral inductors are key component to obtain high performance RF circuits. Electromagnetic simulation of the on-chip spiral inductors is very important for systematic design and improving performance. Electromagnetic simulation of a 2 nH spiral inductor in 5 GHz band is performed. Modeling of the CMOS substrate was key issue for proper simulation. The agreement between measurement and simulation was very good.