Analysis Of Carbon Nanotube Field-Effect Transistor

This paper explores the insights of the most outstanding application of carbon nanotube in electronic field, the carbon nanotube field-effect transistor (CNFET). The motivation of research in CNFET is fuelled by the unique electrical features of CNT, especially the semiconducting feature. Besides, the continuous effort to find future nanoelectronic device that can perform as excellent as MOSFET also push the research of CNFET to be more aggressive. The first section gives an overview of the structure of CNFET followed by the explanation of CNFET operation as a switching device. This premature formation results in poor attributes like small -9 drive current, low transconductance (10 S) and large contact resistances (>1MΩ) [26] . Since the carbon as well as the device performance [33] . For instance, the electrical field is expanded because of the device geometry and contact resistance is lessened by picking an appropriate contact material. Furthermore, the threshold voltage is altogether lower than the back gated structure, and drive current is much higher and transconductance is comparatively high (3.35μS for every nanotube).