20192019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)Requires access

Development of Near UV Laser Diodes

Ronny Kirste, Seiji Mita, Pramod Reddy, Alexander Franke, Qiang Guo, Ke Wang, Ramón Collazo, Zlatko Sitar

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Abstract

The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.

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What this paper is about

The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.

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Available abstract

The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.

Key concepts: Laser, Diode, Optoelectronics, Materials science, Ultraviolet, Semiconductor laser theory, Optics, Physics

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