Development of Near UV Laser Diodes
Ronny Kirste, Seiji Mita, Pramod Reddy, Alexander Franke, Qiang Guo, Ke Wang, Ramón Collazo, Zlatko Sitar
Abstract
Ronny Kirste, Seiji Mita, Pramod Reddy, Alexander Franke, Qiang Guo, Ke Wang, Ramón Collazo, Zlatko Sitar
Abstract
The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.
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The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.
Key concepts: Laser, Diode, Optoelectronics, Materials science, Ultraviolet, Semiconductor laser theory, Optics, Physics