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2019•SID Symposium Digest of Technical PapersRequires access

41.1: Invited Paper: Efficient pre‐treatment for improving the via hole profile in 4‐mask process TFT architecture

Zhen Liu, An-Thung Cho, Zhang Hejing, Yang Fengyun, Liu Kaijun, Qionghua Mo, Chao Wei, Yong Wanfei, James Hsu

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Abstract

Ways to solve the passivation layer undercut in via hole were described in detail. By tuning the pretreatment before the passivation layer deposition, the passivation layer undercut in via hole was solved efficiently without any other side effects. Different from changing dry etching process parameters, we increasing the adhesion of the interface between metal layer and passivation layer to overcome undercut issue.

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What this paper is about

Ways to solve the passivation layer undercut in via hole were described in detail. By tuning the pretreatment before the passivation layer deposition, the passivation layer undercut in via hole was solved efficiently without any other side effects. Different from changing dry etching process parameters, we increasing the adhesion of the interface between metal layer and passivation layer to overcome undercut issue.

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Available abstract

Ways to solve the passivation layer undercut in via hole were described in detail. By tuning the pretreatment before the passivation layer deposition, the passivation layer undercut in via hole was solved efficiently without any other side effects. Different from changing dry etching process parameters, we increasing the adhesion of the interface between metal layer and passivation layer to overcome undercut issue.

Key concepts: Passivation, Undercut, Layer (electronics), Materials science, Etching (microfabrication), Deposition (geology), Optoelectronics, Process (computing)

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41.1: Invited Paper: Efficient pre‐treatment for improving the via hole profile in 4‐mask process TFT architecture — Research Paper | ScholarLens