20192019 IEEE MTT-S International Wireless Symposium (IWS)Requires access

A 2.9 GHz CMOS Phase-Locked Loop with Improved Ring Oscillator

Yating Zhang, X. Zhao, Peng Yu, Tian Zhang, Huihua Liu, Yunqiu Wu, Chenxi Zhao, Kai Kang

Open publisher page 6 citations

Abstract

In this paper, a 2.9 GHz phase-locked loop (PLL) based on a three-stage CMOS ring oscillator is presented. A simplified ring voltage-controlled oscillator is used in the PLL fabricated in 110-nm CMOS technology. The delay cell of the VCO only consists of six transistors and the wide tuning range of the proposed ring VCO is from 1.6 GHz to 7.8 GHz. At 1.2V supply voltage, the PLL consumes 13mW at 2.9 GHz output. The worst-case in-band phase noise of the measured PLL is -98 dBc/Hz while the ring oscillator phase noise is -92 dBc/Hz at 1MHz offset.

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What this paper is about

In this paper, a 2.9 GHz phase-locked loop (PLL) based on a three-stage CMOS ring oscillator is presented. A simplified ring voltage-controlled oscillator is used in the PLL fabricated in 110-nm CMOS technology. The delay cell of the VCO only consists of six transistors and the wide tuning range of the proposed ring VCO is from 1.6 GHz to 7.8 GHz. At 1.2V supply voltage, the PLL consumes 13mW at 2.9 GHz output. The worst-case in-band phase noise of the measured PLL is -98 dBc/Hz while the ring oscillator phase noise is -92 dBc/Hz at 1MHz offset.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this paper, a 2.9 GHz phase-locked loop (PLL) based on a three-stage CMOS ring oscillator is presented. A simplified ring voltage-controlled oscillator is used in the PLL fabricated in 110-nm CMOS technology. The delay cell of the VCO only consists of six transistors and the wide tuning range of the proposed ring VCO is from 1.6 GHz to 7.8 GHz. At 1.2V supply voltage, the PLL consumes 13mW at 2.9 GHz output. The worst-case in-band phase noise of the measured PLL is -98 dBc/Hz while the ring oscillator phase noise is -92 dBc/Hz at 1MHz offset.

Key concepts: Ring oscillator, Phase-locked loop, CMOS, Loop (graph theory), Ring (chemistry), Phase noise, Injection locking, Optoelectronics

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