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2019•Unpublished venueRequires access

Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number

Quang Chuc Nguyen, P. Tounsi, Jean-Pierre Fradin, Jean-Michel Reynès

Open publisher page 1 citations

Abstract

In this work, a new approach for electrical modeling of Silicon Carbide (SiC) MOSFET is presented. The developed model is inspired from the Curtice model which is using a mathematic function reflecting MOSFET output characteristics. The first simulation results showed good agreement with measurements. Improvement is needed in order to increase model accuracy and to take into account the influence of the junction temperature on device characteristics.

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What this paper is about

In this work, a new approach for electrical modeling of Silicon Carbide (SiC) MOSFET is presented. The developed model is inspired from the Curtice model which is using a mathematic function reflecting MOSFET output characteristics. The first simulation results showed good agreement with measurements. Improvement is needed in order to increase model accuracy and to take into account the influence of the junction temperature on device characteristics.

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Available abstract

In this work, a new approach for electrical modeling of Silicon Carbide (SiC) MOSFET is presented. The developed model is inspired from the Curtice model which is using a mathematic function reflecting MOSFET output characteristics. The first simulation results showed good agreement with measurements. Improvement is needed in order to increase model accuracy and to take into account the influence of the junction temperature on device characteristics.

Key concepts: MOSFET, Silicon carbide, Materials science, Reduction (mathematics), Semiconductor device modeling, Electronic engineering, Work (physics), Engineering physics

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