ScholarLens Back to search
2019•2019 Devices for Integrated Circuit (DevIC)Requires access

Comparative Investigation of DSG-MOSFET and Some analysis on its Performance

Babita Kumari, Kaushik Mazumdar, Aniruddha Ghosal

Open publisher page 0 citations

Abstract

AlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET$\mathrm{V}_{\mathrm{s}}$normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET.

About this research paper

What this paper is about

AlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET$\mathrm{V}_{\mathrm{s}}$normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

AlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET$\mathrm{V}_{\mathrm{s}}$normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET.

Key concepts: MOSFET, Electrical engineering, Physics, Optoelectronics, Computer science, Electronic engineering, Engineering, Transistor

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Comparative Investigation of DSG-MOSFET and Some analysis on its Performance — Research Paper | ScholarLens