Analysis by Numerical Simulation of the Effect of Interfacial Defects on CZTS Solar Cell

The performance of CZTS (Cu2ZnSnS4) hetero-junction solar cell is numerically simulated taking into account different type of defects as well as the series and shunt resistances. It was found when considering an ideal structure that the simulation differs greatly from the experimental results (Dhakal et al., Solar Energy, 100, 23–30, 2014). When volume defects are considered in the CZTS absorber layer, better results were obtained but not as expected; only the short circuit current is reproduced. On the other hand, interface states are considered between CZTS and CdS give good agreement of the open circuit voltage. The series and shunt resistance lead to a better agreement of the fill factor. Only when all these are considered together that experimental measurements are reproduced.